Miller MMIC has successfully developed a wideband high-power GaN RF MMIC capable of operating at frequencies up to 40 GHz. This breakthrough in GaN (Gallium Nitride) technology is expected to have significant implications for industries such as defense, telecommunications, and radar systems, where high-power and wideband solutions are critical.
The new GaN MMIC offers superior power efficiency and performance across a broad frequency range, positioning Miller MMIC as a leader in the development of cutting-edge RF components for high-frequency applications.
“This is just the beginning,” said John Miller, GM of Miller MMIC. “Our team has made tremendous strides in pushing the boundaries of GaN technology, and we are excited to reveal more high-frequency, high-power solutions in the near future.”
The development of this wideband GaN MMIC reflects Miller MMIC’s commitment to innovation and its focus on providing high-performance RF solutions for next-generation systems.
